Title :
Hole confinement in a Si/GeSi/Si quantum well on SIMOX
Author :
Nayak, D.K. ; Woo, J.C.S. ; Park, J.S. ; Wang, K.L. ; MacWilliams, K.P.
Author_Institution :
Logic Technol. Div., Adv. Micro Devices Inc., Sunnyvale, CA, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
In this work, hole confinement in a MBE-grown Si/GeSi/Si quantum well on SIMOX substrate is investigated in detail using device simulation, electronic measurements, and optical techniques. The hole confinement is clearly demonstrated from GeSi PMOSFET measurements. The experimental results are in good agreement with device simulation results. The quantum confinement of holes in the GeSi quantum well on SIMOX is confirmed using photoluminescence measurements
Keywords :
Ge-Si alloys; MOSFET; SIMOX; elemental semiconductors; photoluminescence; semiconductor materials; semiconductor quantum wells; silicon; MBE-grown Si/GeSi/Si quantum well; PMOSFET; SIMOX substrate; Si-GeSi-Si; device simulation; electronic measurements; hole confinement; optical techniques; photoluminescence; Capacitance measurement; Fabrication; Germanium silicon alloys; MOSFET circuits; Photoluminescence; Pollution measurement; Quantum capacitance; Silicon germanium; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
