• DocumentCode
    1147660
  • Title

    44-GHz high-efficiency InP-HEMT MMIC power amplifier

  • Author

    Lam, F. ; Matloubian, M. ; Igawa, A. ; Chou, C. ; Kurdoghlian, A. ; Ngo, C. ; Jelloian, L. ; Brown, A. ; Thompson, M. ; Larson, L.

  • Author_Institution
    Microelectron. Circuits Div., Hughes Aircraft Co., Torrance, CA, USA
  • Volume
    4
  • Issue
    8
  • fYear
    1994
  • Firstpage
    277
  • Lastpage
    278
  • Abstract
    A high-efficiency power amplifier was developed using 0.15-μm gatelength, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-added efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm2.
  • Keywords
    III-V semiconductors; MMIC; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; 0.15 micron; 31 percent; 44 GHz; 7 dB; GaInAs-AlInAs-InP; InP-HEMT MMIC power amplifier; chip area; compression point; gain; output power; power-added efficiency; Gain; HEMTs; High power amplifiers; Integrated circuit technology; MIM capacitors; MMICs; Power amplifiers; Power generation; Resistors; Transmission line measurements;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.311497
  • Filename
    311497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1147660