Title :
44-GHz high-efficiency InP-HEMT MMIC power amplifier
Author :
Lam, F. ; Matloubian, M. ; Igawa, A. ; Chou, C. ; Kurdoghlian, A. ; Ngo, C. ; Jelloian, L. ; Brown, A. ; Thompson, M. ; Larson, L.
Author_Institution :
Microelectron. Circuits Div., Hughes Aircraft Co., Torrance, CA, USA
Abstract :
A high-efficiency power amplifier was developed using 0.15-μm gatelength, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-added efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm2.
Keywords :
III-V semiconductors; MMIC; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; 0.15 micron; 31 percent; 44 GHz; 7 dB; GaInAs-AlInAs-InP; InP-HEMT MMIC power amplifier; chip area; compression point; gain; output power; power-added efficiency; Gain; HEMTs; High power amplifiers; Integrated circuit technology; MIM capacitors; MMICs; Power amplifiers; Power generation; Resistors; Transmission line measurements;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
