Title :
Cap thickness effects on Al0.37Ga0.63As and GaAs diode solar cells
Author :
Ristow, M. Ladle ; Kuryla, M.S. ; Chung, B.C. ; Partain, L.D.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
The average device yield for high efficiency Al0.37Ga 0.63As and GaAs n-p diode solar cells was increased, from below 25% to above 75%, by doubling the thickness of the GaAs cap layer to 0.6 μm. Low yields were characterized by a nonlinear shunting mechanism, which partially shorted the junction of the solar cell, independent of the various contact metals and thermal treatments used for ohmic contact formation
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; solar cells; 0.6 micron; Al0.37Ga0.63As; GaAs; GaAs cap layer; cap thickness effects; n-p diode solar cells; nonlinear shunting mechanism; Chemical vapor deposition; Diodes; Gallium arsenide; Laboratories; MOCVD; Ohmic contacts; Photovoltaic cells; Renewable energy resources; Solar energy; Sun;
Journal_Title :
Electron Devices, IEEE Transactions on
