DocumentCode :
1147678
Title :
Calculation of depletion layer thickness by including the mobile carriers
Author :
Mohammadi, Saeed ; Selvakumar, C.R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
43
Issue :
1
fYear :
1996
fDate :
1/1/1996 12:00:00 AM
Firstpage :
185
Lastpage :
188
Abstract :
A useful analytical approximation for depletion layer thickness, which takes into account the effect of mobile carriers under high forward bias is presented. The new expression predicts, in agreement with computer simulations, a significantly smaller depletion layer thickness at high forward bias than that of conventional theory. The results of these effects for heterojunctions shows a less pronounced effect. The model´s validity for different forward biases is also illustrated. Finally, the effect of temperature dependence is discussed
Keywords :
carrier mobility; semiconductor heterojunctions; computer simulation; depletion layer thickness; forward bias; heterojunctions; mobile carriers; temperature dependence; Alloying; Gallium alloys; Gallium arsenide; Gold alloys; III-V semiconductor materials; Laboratories; Metallization; Ohmic contacts; Photovoltaic cells; Predictive models;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.477616
Filename :
477616
Link To Document :
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