Title :
40 Gbit/s low-voltage distributed limiting drivers for optical modulators
Author :
Yu, M. ; Lao, Z. ; Lee, S. ; Xu, M. ; Ho, Victor ; Radisic, V. ; Guinn, K. ; Wang, K.C.
Author_Institution :
OpNext Inc., Thousand Oaks, CA, USA
fDate :
2/6/2003 12:00:00 AM
Abstract :
The development of a monolithic modulator driver designed on a 0.15 μm GaInAs pHEMT technology for 40 Gbit/s optical communications is presented. The driver consists of a differential limiting predriver and a differential distributed postamplifier to achieve enough gain-bandwidth product. The driver achieves an output of 2.4 V with 0.5 Vpp input.
Keywords :
HEMT integrated circuits; III-V semiconductors; differential amplifiers; driver circuits; gallium arsenide; high-speed integrated circuits; indium compounds; optical modulation; optical transmitters; 0.15 micron; 2.4 V; 40 Gbit/s; GaInAs; GaInAs pHEMT technology; LV distributed limiting drivers; differential distributed postamplifier; differential limiting predriver; low-voltage drivers; monolithic modulator driver; optical communications; optical modulators; optical transmitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030198
