Simulation of density variation and step coverage for a variety of via/contact geometries using SIMBAD

Author

Smy, Tom ; Westra, Kenneth L. ; Brett, Michael J.

Author_Institution

Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

591

Lastpage

598

Abstract

The two-dimensional simulation by ballistic deposition of sputtered metal deposited over a 1.5-μm step and a large variety of vias and contacts is presented. The sizes of the vias and contacts are varied from 1 to 3 μm, and three different sidewall topographies are simulated. In addition, simulated film growth over a stacked via/contact is presented. The step coverage of each film is determined, and surface profiles are provided at different growth intervals. The use of SIMBAD, a ballistic deposition technique, provides information unattainable through the use of conventional film deposition simulations. In addition to the step coverage available from conventional simulations, density profiles of the simulated films are produced and the columnar microstructure is analyzed. Finally, conclusions are inferred as to the quality of real films deposited over each via geometry

Keywords

VLSI; integrated circuit technology; metallisation; sputter deposition; 1 to 3 micron; SIMBAD; VLSI; ballistic deposition technique; columnar microstructure; contacts; density profiles; film deposition simulations; multilevel metallisation; sidewall topographies; simulated film growth; simulation model; sputter deposition; step coverage; surface profiles; two-dimensional simulation; via geometry; Analytical models; Contacts; Dielectric thin films; Geometry; Microelectronics; Microscopy; Microstructure; Solid modeling; Substrates; Surface topography;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47762

Filename

47762