A W-band monolithic, singly balanced resistive mixer with low conversion loss

Author

Chang, K.W. ; Lin, E.W. ; Wang, H. ; Tan, K.L. ; Ku, W.H.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

4

Issue

9

fYear

1994

Firstpage

301

Lastpage

302

Abstract

We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-μm pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as P/sub 1-dB,in/-P/sub LO/, is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems.

Keywords

III-V semiconductors; MMIC; aluminium compounds; digital simulation; field effect integrated circuits; gallium arsenide; indium compounds; mixers (circuits); 0.1 mum; 12.8 dB; AlGaAs-InGaAs; AlGaAs/InGaAs; FET mixer; GaAs; GaAs HEMT technology; LO drive; W-band; circuit components; frequency range; fully monolithic subsystems; integration; low conversion loss; minimum measured conversion loss; mixer figure of merit; monolithic; pseudomorphic; simulated performance; singly balanced resistive mixer; Circuits; Diodes; FETs; Frequency conversion; Frequency measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Loss measurement; Mixers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.311514

Filename

311514