Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application

This paper venture into prospective ideas of finding viable solution of nanoelectronics device design by an assessment of incorporating vertical impact-ionization MOSFET (IMOS) with strained SiGe technology into a formation of an emerging device structure with elevated performance and reliable outcomes for future bio-based sensor application. Impact Ionization FET biosensors can be extremely promising for applications where ultra-high sensitivity and fast response is desirable. An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). This will eventually enhanced the switching behavior of the transistor and enhancing its electrical performance and response time particularly when scaled down into nanometre regime. However, vertical IMOS experience parasitic bipolar transistors (PBT) effect and low breakdown voltage. Parasitic Bipolar Transistor effect is a phenomenon where the MOSFET act as a minority carrier device like BJT instead of majority carrier device. This is not favorable for any power device or sensor. Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the performance of the device. Eventually, this device will prolong the increase density of transistor in a chip for future application of biosensor nanoelectronics.