Title :
Large-signal two-terminal device model for nanoelectronic circuit analysis
Author :
Rose, Garrett S. ; Ziegler, Matthew M. ; Stan, Mircea R.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
As the nanoelectronics field reaches the maturity needed for circuit-level integration, modeling approaches are needed that can capture nonclassical behaviors in a compact manner. This paper proposes a universal device model (UDM) for two-terminal devices that addresses the challenge of correctly balancing accuracy, complexity, and flexibility. The UDM qualitatively captures fundamental classical and quantum phenomena and enables nanoelectronic circuit design and simulation. We discuss the motivation behind this modeling approach as well as the underlying details of the model. Furthermore, we present a circuit example of the model in action.
Keywords :
circuit simulation; integrated circuit design; integrated circuit modelling; molecular electronics; nanoelectronics; circuit level integration; circuit level modeling; large signal two terminal device model; nanoelectronic circuit analysis; nanoelectronic circuit design; nanoelectronic circuit simulation; quantum phenomena; universal device model; Circuit analysis; Circuit simulation; Circuit synthesis; Equations; Molecular electronics; Nanoscale devices; Nanotechnology; Solid state circuits; Very large scale integration; Compact model; molecular electronics; nanotechnology; very large scale integration (VLSI);
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2004.836291