Title :
Electrical properties of TiO2 films deposited on strained Si1-yCy layers
Author :
Dalapati, G.K. ; Chatterjee, Saptarshi ; Samanta, S.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fDate :
2/6/2003 12:00:00 AM
Abstract :
Insulating high dielectric constant (high-k) titanium dioxide (TiO2) films have been deposited on solid phase epitaxially-grown tensilely strained Si1-yCy layers by microwave plasma enhanced chemical vapour deposition using titanium tetrakis isopropoxide (TTIP) as source material and oxygen. Using metal insulator semiconductor capacitor structure, the interface and electrical properties have been studied both at room and high temperature. Good electrical properties are observed in deposited TiO2 thin films.
Keywords :
MIS structures; dielectric thin films; permittivity; plasma CVD coatings; semiconductor epitaxial layers; semiconductor-insulator boundaries; silicon compounds; titanium compounds; wide band gap semiconductors; MIS capacitor structure; MOSFETs; TTIP source material; Ti tetrakis isopropoxide; TiO2 films; TiO2-SiC; electrical properties; gate dielectric; gate insulators; high dielectric constant films; interface properties; microwave plasma enhanced CVD; solid phase epitaxially-grown SiC layers; strained Si1-yCy layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030210
