• DocumentCode
    1147824
  • Title

    Electrical properties of TiO2 films deposited on strained Si1-yCy layers

  • Author

    Dalapati, G.K. ; Chatterjee, Saptarshi ; Samanta, S.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • Volume
    39
  • Issue
    3
  • fYear
    2003
  • fDate
    2/6/2003 12:00:00 AM
  • Firstpage
    323
  • Lastpage
    324
  • Abstract
    Insulating high dielectric constant (high-k) titanium dioxide (TiO2) films have been deposited on solid phase epitaxially-grown tensilely strained Si1-yCy layers by microwave plasma enhanced chemical vapour deposition using titanium tetrakis isopropoxide (TTIP) as source material and oxygen. Using metal insulator semiconductor capacitor structure, the interface and electrical properties have been studied both at room and high temperature. Good electrical properties are observed in deposited TiO2 thin films.
  • Keywords
    MIS structures; dielectric thin films; permittivity; plasma CVD coatings; semiconductor epitaxial layers; semiconductor-insulator boundaries; silicon compounds; titanium compounds; wide band gap semiconductors; MIS capacitor structure; MOSFETs; TTIP source material; Ti tetrakis isopropoxide; TiO2 films; TiO2-SiC; electrical properties; gate dielectric; gate insulators; high dielectric constant films; interface properties; microwave plasma enhanced CVD; solid phase epitaxially-grown SiC layers; strained Si1-yCy layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030210
  • Filename
    1179478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1147824