DocumentCode :
1147834
Title :
Analog-to-digital converter based on single-electron tunneling transistors
Author :
Hu, Chaohong ; Cotofana, Sorin Dan ; Jiang, Jianfei ; Cai, Qiyu
Author_Institution :
Shanghai Jiao Tong Univ., China
Volume :
12
Issue :
11
fYear :
2004
Firstpage :
1209
Lastpage :
1213
Abstract :
A novel single-electron tunneling transistors (SETTs) based analog-to-digital converter (ADC) is proposed in this paper. The scheme we propose fully utilizes Coulomb oscillation effect, can properly operate at T>0 K, and only a capacitive divider (built with 2n-2 capacitors) and n pairs of complementary SETTs are required for an n-bit ADC implementation. When compared with other state-of-the-art SET based ADCs our method provides the most compact solution measured in terms of circuit elements and has a potential advantage in terms of conversion speed. To illustrate the operation of the proposed scheme, a 4-bit ADC is demonstrated at 10K by means of simulation.
Keywords :
Coulomb blockade; analogue-digital conversion; circuit simulation; single electron transistors; 4 bit; ADC; Coulomb oscillation effect; analog to digital converter; capacitive divider; circuit simulation; complementary transistor; single electron tunneling transistors; state of the art; Analog-digital conversion; Capacitance; Capacitors; Chaos; Circuits; Laboratories; Single electron transistors; Temperature; Tunneling; Velocity measurement; Analog-to-digital conversion (ADC); circuit modeling; semiclassical method; single-electron tunneling;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2004.836313
Filename :
1350793
Link To Document :
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