DocumentCode
1147835
Title
Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes
Author
Van Tuyen, V. ; Nadia, F. ; Hu, Zhirun ; Rezazadeh, A.A.
Author_Institution
Dept. of Electron. Eng., King´´s Coll., London, UK
Volume
39
Issue
3
fYear
2003
fDate
2/6/2003 12:00:00 AM
Firstpage
324
Lastpage
326
Abstract
The effect of temperature variation on barrier height of a GaAs planar doped barrier (PDB) diode has been investigated. Measurements show that the barrier height of such a device increases with increasing temperature, by the rate of 0.25 to 0.3 meV/K for the temperature range 200-360 K. Although it has been theoretically predicted that the PDB diode has a positive temperature coefficient, this is understood to be the first time that such prediction has been verified experimentally.
Keywords
III-V semiconductors; gallium arsenide; semiconductor device measurement; semiconductor diodes; 200 to 360 K; GaAs; GaAs planar doped barrier diodes; PDB diode; barrier height temperature dependence; experimental verification; positive temperature coefficient;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030205
Filename
1179479
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