Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes

The effect of temperature variation on barrier height of a GaAs planar doped barrier (PDB) diode has been investigated. Measurements show that the barrier height of such a device increases with increasing temperature, by the rate of 0.25 to 0.3 meV/K for the temperature range 200-360 K. Although it has been theoretically predicted that the PDB diode has a positive temperature coefficient, this is understood to be the first time that such prediction has been verified experimentally.