Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

Author

Larki, Farhad ; Dehzangi, Abdollah ; Ali, Sawal H. M. ; Jalar, A. ; Islam, Md Shariful ; Majlis, Burhanuddin Yeop ; Saion, Elias B. ; Hamidon, Mohd Nizar ; Hutagalung, Sabar D.

Author_Institution

Inst. of Microeng. & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

170

Lastpage

173

Abstract

The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (I_ON/I_OFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

Keywords

technology CAD (electronics); transistors; 3D technology computer-aided design; band energy variation; electric field; electrical characteristics; maximum transconductance; nanosize air gap variation; on state current; on-off current ratio; pinch-off lateral gate transistors; switching performance; Atmospheric modeling; Electric fields; Logic gates; Nanoscale devices; Threshold voltage; Transconductance; Transistors; Air Gap; Junctionless Transistor (JLT); Lateral gate (LG); TCAD Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920823

Filename

6920823