DocumentCode
1147857
Title
Characterization and modeling of run-time techniques for leakage power reduction
Author
Tsai, Yuh-Fang ; Duarte, David E. ; Vijaykrishnan, N. ; Irwin, Mary Jane
Author_Institution
Dept. of Comput. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
Volume
12
Issue
11
fYear
2004
Firstpage
1221
Lastpage
1233
Abstract
While some leakage power reduction techniques require modification of the process technology, others are based on circuit-level optimizations and are applied at run-time. We focus our study on the latter and compare three techniques: input vector control, body bias control, and power supply gating. We determine their limits and benefits in terms of the potential leakage reduction, performance penalty, and area and power overhead. The leakage power savings trends considering technology scaling are also presented. Due to the differences in the properties of datapath logic and memory structures, different implementations are recommended. Finally, the use of the "minimum idle time" parameter, as a metric for evaluating different leakage control mechanisms, is shown.
Keywords
VLSI; circuit optimisation; integrated circuit modelling; leakage currents; logic circuits; threshold logic; body bias control; circuit level optimization; datapath logic; input vector control; leakage control mechanisms; leakage power reduction; memory structures; potential leakage reduction; power supply gating; run time technique modeling; CMOS technology; Circuits; Fabrication; FinFETs; Leakage current; Runtime; Silicon on insulator technology; Subthreshold current; Threshold voltage; Very large scale integration; Data preserving; leakage power; low power; power estimation; run-time leakage reduction; technology scaling; very large scale integration (VLSI) circuits;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2004.836315
Filename
1350795
Link To Document