DocumentCode :
1147907
Title :
Highly Efficient Second-Harmonic Generation in Monolithic Matching Layer Enhanced Al _x Ga _{1-x}
Author :
Abolghasem, Payam ; Han, Junbo ; Bijlani, Bhavin J. ; Arjmand, Arghavan ; Helmy, Amr S.
Author_Institution :
Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Volume :
21
Issue :
19
fYear :
2009
Firstpage :
1462
Lastpage :
1464
Abstract :
In this letter, we demonstrate significant improvement in second-harmonic (SH) generation using matching layer enhanced AlxGa1-xAs Bragg reflection waveguide in type-I and type-II phase-matching schemes. For a 1.8-ps pulsed pump around 1550 nm with an average power of 3.3 mW, peak SH powers of 28 and 60 muW were measured in type-I and type-II interactions, respectively. The associated normalized conversion efficiencies were estimated to be 5.30 times 103% and 1.14 times 104% W-1 middot cm-2 with SH process bandwidths of 1.7- and 1.8-nm full-width at half-maximum. Waveguides with various ridge widths ranging between 2.8 and 4.8 mum with 2.17-mm length were characterized.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; integrated optics; optical harmonic generation; optical waveguides; AlxGa1-xAs; Bragg reflection waveguides; monolithic matching layer; power 28 muW; power 3.3 mW; power 60 muW; second harmonic generation; size 2.17 mm; size 2.8 mum; size 4.8 mum; time 1.8 ps; wavelength 1550 nm; Bragg reflection waveguides (BRWs); nonlinear optics; optical nonlinearities in semiconductors; phase matching; second-harmonic generation (SHG); second-order nonlinearities;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2027996
Filename :
5173550
بازگشت