Modeling the velocity saturation region of graphene nanoribbon transistor

Author

Hosseinghadiry, M. ; Ismail, Riyad ; Fotovvatikhah, F. ; Khaledian, M. ; Saeidmanesh, M.

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

186

Lastpage

188

Abstract

A semi-analytical model for impact ionisation coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating the probability of electrons reaching ionisation threshold energy E_t and the distance travelled by electron gaining E_t. In addition, ionisation threshold energy is semi-analytically modeled for GNR. We justify our assumptions using analytical modeling and comparison with simulation results. Gaussian simulator together with analytical modeling is used in order to calculate ionisation threshold energy and Kinetic Monte Carlo is employed to calculate ionisation coefficient and verify the analytical results. Finally, the ionization profile is presented using the proposed models and simulation is carried out. The results are compared with that of silicon.

Keywords

Monte Carlo methods; electron impact ionisation; field effect transistors; graphene; nanoribbons; probability; velocity; GNR; Gaussian simulator; analytical modeling; electron gain travelled distance; electron probability; graphene nanoribbon transistor; impact ionisation coefficient; ionisation threshold energy; ionization profile; kinetic Monte Carlo; velocity saturation region; Analytical models; Electric fields; Electric potential; Graphene; Semiconductor device modeling; Silicon; Transistors; Graphene Nanoribbon Field Effect Transistor; Length of velocity saturation region; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920827

Filename

6920827