Title :
Bulk inversion in FinFETs and implied insights on effective gate width
Author :
Kim, Seung-Hwan ; Fossum, Jerry G. ; Trivedi, Vishal P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
Relative values of on-state current in undoped-body double-gate (DG) and triple-gate (TG) FinFETs are examined via three-dimensional numerical device simulations. The simulation results reveal significant bulk inversion in the fin bodies, which limits the benefit of the third (top) gate in the TG FinFET and which negates the utility of the commonly defined effective gate width (Weff=2hSi+wSi). Even the concept of Weff for the TG FinFET is invalidated, but the proper Weff for the DG FinFET is defined. Physical insights attained from the simulations further solidify our notion, based previously on gate layout-area inefficiency, that the third gate is neither desirable nor beneficial.
Keywords :
CMOS integrated circuits; MOSFET; circuit layout; current density; power field effect transistors; semiconductor device models; bulk inversion; gate layout area; gate width; multigate MOSFET; on-state current; three-dimensional numerical device simulation; undoped-body double-gate FinFET; undoped-body triple-gate FinFET; CMOS technology; Electrodes; FinFETs; MOSFETs; Nanoscale devices; Numerical simulation; Quantization; Solid modeling; Stress; Bulk inversion; gate layout area; multi-gate MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.854286
