Structural damage of Si-implanted in the In0.53Ga0.47As thin film

Damage profiling of implanted ions in semiconductor´s layer is crucial in order to accurately estimate the ion distribution and concentration in the target substrates. It also gives the predicted number of vacancies and interstitials after the collision events. This is particularly important prior to the ion implantation so as to reduce the defect formation and damage to the target´s lattice which subsequently degrade the performance of the device. In this paper, we studied the optimized energy and range of ions implanted silicon in In_0.53Ga_0.47As film by utilizing the Stopping Range of Ions in Matter (SRIM) simulation. The effects of implantation energy in different thickness are also discussed based on creation of phonons, vacancies and ionization.