Title :
Effect of extrinsic impedance and parasitic capacitance on figure of merit of RF MOSFET
Author :
Yeh, Wen-Kuan ; Ku, Chao-Ching ; Chen, Shuo-Mao ; Fang, Yean-Kuen ; Chao, C.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan
Abstract :
This paper investigates the impact of source/drain impedance, gate-to-bulk capacitance, and gate resistance on device properties from 0 to 50 GHz for 0.13-μm MOSFETs. Better device characteristics (gm and Cgg) can be found on MOSFETs with lower metal (or source/drain) resistance. But the best frequency characteristics (fT and fmax) occurred on MOSFETs with medium metal (or source/drain) resistance due to the increased interconnection capacitances. For radio frequency MOSFETs with finger-gate structure, better high-frequency behavior occurred on devices with medium finger-gate width Wf because of the tradeoff between gate (or source/drain) resistance and parasitic capacitance.
Keywords :
CMOS integrated circuits; MOSFET; microwave field effect transistors; radiofrequency integrated circuits; semiconductor device models; RF MOSFET; extrinsic impedance; finger-gate structure; gate resistance; gate-to-bulk capacitance; interconnection capacitances; metal resistance; parasitic capacitance; radio frequency; source impedance; source/drain impedance; source/drain resistance; Chaotic communication; Impedance; Integrated circuit interconnections; MOSFET circuits; Magneto electrical resistivity imaging technique; Microwave devices; Parasitic capacitance; Probes; Radio frequency; Scattering parameters; Gate-to-bulk capacitance; radio frequency (RF); source impedance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.855060
