Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling

Author

Wu, Jun-Wei ; You, Jian-Wen ; Ma, Huan-Chi ; Cheng, Chih-Chang ; Hsu, Chang-Feng ; Chang, Chih-Sheng ; Huang, Gou-Wei ; Wang, Tahui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

52

Issue

9

fYear

2005

Firstpage

2061

Lastpage

2066

Abstract

Low-frequency flicker noise in analog n-MOSFETs with 15-Å gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.

Keywords

Fermi level; MOSFET; analogue circuits; hole traps; semiconductor device noise; silicon; thin film transistors; tunnelling; valence bands; Si; Si substrate; electron hole recombination; low-frequency noise; n-MOSFETs; noise generation mechanism; polysilicon gate; quasi-Fermi-level; random telegraph signal; ultrathin oxide; valence-band electron tunneling; 1f noise; Charge carrier processes; Electron traps; Low-frequency noise; MOSFET circuits; Radio frequency; Semiconductor device modeling; Semiconductor device noise; Telegraphy; Tunneling; Low-frequency noise; random telegraph signal; ultrathin oxide MOSFET; valence-band tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.854264

Filename

1499095