A DC-10 GHz high gain-low noise GaAs HBT direct-coupled amplifier

Author

Kobayashi, K.W. ; Oki, A.K.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

5

Issue

9

fYear

1995

Firstpage

308

Lastpage

310

Abstract

An AlGaAs-GaAs HBT wideband low noise amplifier has been achieved using a direct-coupled amplifier topology. A nominal gain of 22.5 dB and a noise figure of 3.0-3.65 dB has been achieved over a DC-10 GHz band, while consuming less than 55 mW of DC power through a 5 V supply. This result benchmarks the lowest noise figure so far reported for a direct-coupled HBT amplifier at X-band frequencies. In addition, an approximate expression for the amplifier noise figure is given that predicts the noise figure to within 0.3 dB over bias and frequency. The amplifier can be compacted into a 0.3/spl times/0.3 mm/sup 2/ area and can yield as many as 30000 die per 3-in GaAs wafer. The broadband gain and noise figure, low DC power, and miniature die size makes this design attractive as a standard off-the-shelf microwave product for high volume commercial applications.<>

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MMIC; bipolar analogue integrated circuits; gallium arsenide; integrated circuit noise; microwave amplifiers; wideband amplifiers; 0 to 10 GHz; 10 GHz; 22.5 dB; 3 to 3.65 dB; 5 V; 55 mW; AlGaAs-GaAs; HBT amplifier; SHF; X-band frequencies; amplifier noise figure; broadband gain; direct-coupled amplifier topology; high gain LNA; high volume commercial applications; wideband low noise amplifier; Bandwidth; Broadband amplifiers; Feedback; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Optical amplifiers; Resistors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.410407

Filename

410407