Title :
Small-signal characterization of SiGe-HBT fT-doubler up to 120 GHz
Author :
Joodaki, Mojtaba
Author_Institution :
ATMEL Germany GmbH, Heilbronn, Germany
Abstract :
In this brief, small-signal characterizations of selectively implanted collector (SIC) and non-SIC SiGe-heterojunction bipolar transistors (HBT) fT-doublers up to 120 GHz are measured, analyzed, and compared with those of the corresponding single devices. The measured results confirm a great improvement in transit frequency with almost no considerable decrease in the maximum stable gain/maximum available gain, and maximum oscillation frequency. Since the fT-doubler can be used easily instead of a single transistor, a much higher transit frequency and RF power can be achieved while using a technology with a moderate fT.
Keywords :
Ge-Si alloys; frequency multipliers; heterojunction bipolar transistors; microwave frequency convertors; RF power; SiGe; SiGe-HBT fT-doubler; maximum oscillation frequency; nonSIC heterojunction bipolar transistors; s-parameter measurements; single transistor; small-signal characterization; transit frequency; Bipolar transistors; Capacitance; Capacitors; Circuits; Current density; Diodes; Radio frequency; Silicon carbide; Thermal resistance; Voltage; S-parameter measurements; SiGe-HBT; transit frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.854289
