• DocumentCode
    1148367
  • Title

    100 GHz dynamic frequency divider in SiGe bipolar technology

  • Author

    Rylyakov, A. ; Klapproth, L. ; Jagannathan, B. ; Freeman, G.

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    39
  • Issue
    2
  • fYear
    2003
  • fDate
    1/23/2003 12:00:00 AM
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a -3.8 V supply and designed in IBM´s 0.12 μm SiGe technology with fT of 207 GHz and fMAX of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM´s 0.18 μm SiGe BiCMOS technology.
  • Keywords
    Ge-Si alloys; bipolar MIMIC; bipolar logic circuits; emitter-coupled logic; flip-flops; frequency dividers; high-speed integrated circuits; semiconductor materials; -3.8 V; 0.12 micron; 100 GHz; 207 GHz; 285 GHz; 62 GHz; SiGe; SiGe bipolar technology; divider performance; double emitter follower E2CL logic family; dynamic frequency divider; master-slave D-flip-flop circuit; regenerative frequency division approach; single emitter follower ECL logic; static frequency divider; two-latch toggle flip-flop;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030164
  • Filename
    1179527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1148367