Title :
Influence of gadolinium doping on the crystalline structure and optical properties of zinc oxide thin films
Author :
Sarip, N. ; Mahmud, F. ; Sahdan, Mohd Zainizan ; Tawil, S.N.M.
Author_Institution :
Microelectron. & Nanotechnol.-Shamsuddin, Res. Centre (MiNT-SRC), Univ. Tun Hussein Onn Malaysia, Parit Raja, Malaysia
Abstract :
This report represents an experimental investigation on the structural and optical modification of ZnO thin films towards the Gd dopant content, whereby the desired films were deposited on glass substrates by chemical solution method. The prepared samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and surface profiler. The optical properties were studied by UV-Visible spectroscopy technique. The influence of Gd dopant on structural and optical properties of the prepared thin films were investigated and discussed based on the structure modification and band gap of undoped and Gd-doped ZnO thin films.
Keywords :
II-VI semiconductors; X-ray diffraction; energy gap; field emission electron microscopy; gadolinium; liquid phase deposition; scanning electron microscopy; semiconductor doping; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; FESEM; SiO2; UV-visible spectroscopy technique; X-ray diffraction; XRD; ZnO:Gd; band gap; chemical solution method; crystalline structure; field emission scanning electron microscopy; gadolinium doping; glass substrates; optical properties; structural properties; surface profiling; zinc oxide thin films; Doping; Optical diffraction; Optical films; Photonic band gap; X-ray scattering; Zinc oxide; chemical solution deposition; doping; gadolinium; zinc oxide;
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920850
