• DocumentCode
    114838
  • Title

    Structural and electronic properties of Li doped decahedral Ag12Li1 bimetallic nanoclusters

  • Author

    Debnath, Shoubhik ; Said, Suhana Mohd

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Malaya, Kuala Lumpur, Malaysia
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    278
  • Lastpage
    281
  • Abstract
    This paper is focused on the quantum modeling of the electronic and structural properties of nanoclusters. Two doping positions for Lithium (Li) metal doped in a 13-atom Decahedron Silver (Ag), the centrally-doped (c-doped) and surface doped (s-doped) in Ag12Li1 bimetallic nanoclusters were modeled. Decahedral Ag13 and centrally/core doped(c-doped) and surface/shell doped (s-doped) Ag12Li1 bimetallic clusters have been investigated in the framework of density functional theory (DFT) calculations. Both of the c-doped and s-doped clusters exhibited higher Binding Energy (Eb) and Ionization Potential (IP) than the decahedral Ag13. The s-doped Ag12Li1 was found with higher affinity for electrons compared to Ag13 and c-doped Ag12Li1. The geometric and energetic considerations here indicate that photoelectron spectroscopy might be useful to characterize these species experimentally. Potential applications include nano-devices and catalysis.
  • Keywords
    binding energy; density functional theory; ionisation potential; lithium; lithium alloys; metal clusters; nanostructured materials; photoelectron spectra; silver alloys; AgLi:Li; DFT; binding energy; catalysis; centrally-core doped bimetallic nanocluster; density functional theory; electronic properties; ionization potential; lithium metal doped 13-atom decahedron silver; photoelectron spectroscopy; quantum modeling; structural properties; surface-shell doped bimetallic nanocluster; Chemicals; Discrete Fourier transforms; IP networks; Lithium; Nanobioscience; Silver; Bimetallic cluster; DFT calculation; Silver-Lithium nanoalloy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Type

    conf

  • DOI
    10.1109/SMELEC.2014.6920851
  • Filename
    6920851