Title :
Effect of different tunnel diodes on the efficiency of multi-junction III-V solar cells
Author :
Hung-Wei Yu ; Hong-Quan Nguyen ; Chen-Chen Chung ; Ching-Hsiang Hsu ; Chih-Jen Hsiao ; Chang, Edward Yi
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is found that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10° off GaAs substrates show a higher external quantum efficiency (EQE) but also generate a higher peak current density (Jpeak) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 10°off GaAs substrates. Furthermore, smooth surface (rms roughness: 1.54 Å) and sharp interface for the GaAs/Al0.3Ga0.7As TDs were obtained when the (100) tilted 10° off toward [111] GaAs substrate was used. The conversion efficiency of InGaP/GaAs dual-junction solar cell with N++-GaAs/P++-AlGaAs TD grown on the (100) tilted 10° off toward (111) GaAs substrate is close to 20%.
Keywords :
III-V semiconductors; elemental semiconductors; solar cells; substrates; tunnel diodes; Al0.3Ga0.7As; GaAs; InGaP; external quantum efficiency; gallium arsenide dual-junction solar cells; indium gallium phosphide dual-junction solar cells; misoriented gallium arsenide substrates; multijunction III-V solar cell efficiency; peak current density; tunnel diodes; Current density; Epitaxial layers; Gallium arsenide; Photonic band gap; Photovoltaic cells; Substrates; InGaP/GaAs dual junction solar cells; N++-GaAs/P++-AlGaAs tunnel diodes; misoriented GaAs substrates;
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920856
