Title :
9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias
Author :
Zhang, A.P. ; Rowland, L.B. ; Kaminsky, E.B. ; Tucker, J.B. ; Kretchmer, J.W. ; Allen, A.F. ; Cook, J. ; Edward, B.J.
Author_Institution :
Gen. Electr. Global Res. Center, Niskayuna, NY, USA
fDate :
1/23/2003 12:00:00 AM
Abstract :
1.5 mm gate periphery AlGaN/GaN HEMTs were fabricated and tested. 9.2 W/mm (total 13.8 W) power was obtained at 10 GHz under pulsed conditions without active cooling. The pulse width was 50 μs with 5% duty cycle. This is the state-of-the-art power density demonstrated from the similar size devices. The device was biased at up to 55 V drain bias. At the above pulse conditions and drain bias, the simulated maximum junction temperature was 170°C, indicating that device performance was limited by the self-heating effect.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 10 GHz; 13.8 W; 170 degC; 55 V; AlGaN-GaN; AlGaN/GaN HEMT; drain bias; duty cycle; junction temperature; power density; power microwave transistor; pulse width; self-heating effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030107
