DocumentCode :
1148598
Title :
MOSFET gate resistance determination
Author :
Torres-Torres, R. ; Murphy-Arteaga, R.S. ; Decoutere, S.
Author_Institution :
Dept. of Electron. Eng., Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
Volume :
39
Issue :
2
fYear :
2003
fDate :
1/23/2003 12:00:00 AM
Firstpage :
248
Lastpage :
250
Abstract :
A simple and reliable method to determine a MOSFET´s gate resistance (Rg) directly from S-parameter measurements is presented. The extracted data agree well with the data predicted by transmission line theory and show that the main contribution of the transistor´s input resistance (Rin) comes from the gate electrode resistance for devices with channel length below 0.2 μm.
Keywords :
MOSFET; S-parameters; electric resistance measurement; semiconductor device measurement; semiconductor device models; 0.2 micron; MOSFET gate resistance determination; S-parameter measurements; channel length; gate electrode resistance; simple reliable method; transistor input resistance; transmission line theory;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030124
Filename :
1179548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1148598
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