DocumentCode :
1148819
Title :
2.7- 
m GaSb-Based Diode Lasers With Quinary Waveguide
Author :
Chen, J. ; Kipshidze, G. ; Shterengas, L. ; Hosoda, T. ; Wang, Y. ; Donetsky, D. ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Volume :
21
Issue :
16
fYear :
2009
Firstpage :
1112
Lastpage :
1114
Abstract :
Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mum with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2 per QW and slope efficiency of 150 mW/A were demonstrated at 16degC.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; optical waveguides; semiconductor lasers; AlGaInAsSb; Type-I double-quantum-well diode lasers; continuous-wave output power; differential gain; power 600 mW; power-conversion efficiency; quinary waveguide; room-temperature; slope efficiency; temperature 16 degC; temperature 293 K to 298 K; threshold current density; wavelength 2.7 mum; Diode lasers; Doping; Gas lasers; Laser modes; Optical design; Optical waveguides; Quantum well lasers; Semiconductor lasers; Threshold current; Waveguide lasers; Laser; power laser; semiconductor laser;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2023224
Filename :
5174132
Link To Document :
