DocumentCode :
1148896
Title :
New Superjunction LDMOS With 
-Type Charges\´ Compensation Layer
Author :
Duan, Baoxing ; Yang, Yintang ; Zhang, Bo
Author_Institution :
Key Lab. of the Minist. of Educ. for Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an
Volume :
30
Issue :
3
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
305
Lastpage :
307
Abstract :
A new superjunction lateral double diffused MOSFET (LDMOST) is designed with an N-type buried layer in the P-substrate near the drain to suppress the effect of substrate-assisted depletion resulting from N-type charges´ compensating charges´ imbalance between the pillars of the superjunction layer. By the effect of the electric field modulation, a more uniform surface electric field is obtained by the new high electric field peak introduced by the p-n junction of the P -substrate and N-type charges´ compensation layer. The new effect of reduced bulk field is introduced to improve the vertical breakdown voltage (BV) by reducing the high bulk electric field around the drain. Fabricated N-buried SJ LDMOST with a drift region length of 35 mum and a pillar width of 4.0 mum exhibits a specific on resistance of 98 mOmegamiddotcm2 and a BV of 410 V.
Keywords :
MOSFET; electric breakdown; electric fields; junction gate field effect transistors; N-type charge compensation layer; drift region; electric field modulation; p-n junction; substrate-assisted depletion; superjunction LDMOS; superjunction lateral double diffused MOSFET; uniform surface electric field; vertical breakdown voltage; Breakdown voltage (BV); lateral double diffused MOSFET (LDMOST); p-n junction; superjunction;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2012396
Filename :
4776505
Link To Document :
