Fabrication and characterization of polysilicon for DNA detection

We present the fabrication and electrical characterization of polysilicon and their properties with application in biomolecule sensors for DNA detection. Conventional photolithography technique was used to fabricate the DNA detection structure for two different wafer substrate i.e. N- and P-type. The fabrication processes involve of deposition, etching and oxidation to achieve the final structure. Surface modification, immobilization and hybridization were executed prior to electrical characterization by using cyclic voltammetry. It was observed that the modified surface with APTES achieved the highest current for both p- and n-type wafer with changes from 0.52 μA to 3.32 μA and from 0.57 μA to 2.52 μA respectively. Moreover, redox current of hybridization is observed approximately 22 % and 10 % larger than immobilized electrode for p- and n-type wafer.