• DocumentCode
    114906
  • Title

    Synthesis of zinc oxide thin film by anodizing

  • Author

    Voon, C.H. ; Tukemon Tukiman, N. ; Lim, B.Y. ; Hashim, U. ; Ten, S.T. ; Derman, M.N. ; Foo, K.L. ; Arshad, M. K. Md

  • Author_Institution
    Inst. of Nanoelectric Eng., Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    420
  • Lastpage
    423
  • Abstract
    In this work, 99% purity zinc plates were anodized at potentiostatic conditions in distilled water at 25°C. The anodizing voltages were varied from 10 V to 30 V. The morphologies of the ZnO thin film were investigated by using scanning electron microscope (SEM) and the compositions were confirmed through the characterization using X-ray diffraction (XRD). The current versus time transients during the anodizing were recorded. SEM images show that thread-like nanostructures were present on the surface of Zn plates anodized at 25 V and 30 V. XRD patterns revealed that ZnO were present on all Zn plates anodized at anodizing voltages ranged from 10 V to 30 V. Current recorded during the anodizing process increased with the anodizing voltages due to the formation of thread-like nanostructures with lower electrical resistance.
  • Keywords
    II-VI semiconductors; X-ray diffraction; anodisation; electrical resistivity; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; SEM; X-ray diffraction; XRD; ZnO; anodizing voltages; electrical resistance; scanning electron microscope; temperature 25 C; thin film; thread-like nanostructures; voltage 10 V to 30 V; Morphology; Nanostructures; Scanning electron microscopy; Surface morphology; X-ray scattering; Zinc oxide; anodizing; anodizing voltages; nanostructures; thin film; zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Type

    conf

  • DOI
    10.1109/SMELEC.2014.6920887
  • Filename
    6920887