Title :
An ultrahigh-speed GaAs MESFET operational amplifier
Author :
Larson, Lawrence E. ; Chou, Chia-Shing ; Delaney, Michael J.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature (≈300°C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz fT MESFET process, with 0.2-μm electron-beam defined gates. The high levels of 1/f noise, MESFET frequency-dependent output conductance, and large offset voltage standard deviation limit the application of the circuit to moderate precision applications
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; differential amplifiers; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave amplifiers; operational amplifiers; radiofrequency amplifiers; ultra-high-frequency amplifiers; wideband amplifiers; 0.2 micron; 1/f noise; 10 GHz; 65 dB; DC gain; GaAs; III-V semiconductors; MESFET; MIC fabrication procedures; electron-beam defined gates; feedback techniques; frequency-dependent output conductance; linear monolithic IC; moderate precision applications; offset voltage standard deviation; operational amplifier; ultrahigh-speed; undoped GaAs buffer; wide-bandwidth; wideband op amp; Broadband amplifiers; Circuit noise; Feedback circuits; Frequency; Gallium arsenide; MESFET circuits; Noise level; Operational amplifiers; Temperature sensors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
