Title :
High-radiance light-emitting diodes
Author :
Ettenberg, Michael ; Hudson, Kenneth C. ; Lockwood, Harry F.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
fDate :
10/1/1973 12:00:00 AM
Abstract :
The properties of AlxGa1-xAs heterojunction incoherent edge emitters are described. Single (SH) and double-heterojunction (DH) diodes emitting at about 8200 Å were studied. The highest CW radiance measured perpendicular to the emitting facet was 95 W/cm2.sr at 4200 A/cm2for a stripe-geometry SH device. This high radiance level was found to be consistent with an operating life of many thousands of hours. The near- and far-field patterns of the diodes are presented as well as the spectral characteristics and the radiance as a function of drive current, both pulsed and dc.
Keywords :
Coatings; DH-HEMTs; Detectors; Doping; Geometrical optics; Heterojunctions; Light emitting diodes; Optical refraction; Photonic band gap; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1973.1077401
