• DocumentCode
    1149232
  • Title

    High-radiance light-emitting diodes

  • Author

    Ettenberg, Michael ; Hudson, Kenneth C. ; Lockwood, Harry F.

  • Author_Institution
    RCA Laboratories, Princeton, NJ, USA
  • Volume
    9
  • Issue
    10
  • fYear
    1973
  • fDate
    10/1/1973 12:00:00 AM
  • Firstpage
    987
  • Lastpage
    991
  • Abstract
    The properties of AlxGa1-xAs heterojunction incoherent edge emitters are described. Single (SH) and double-heterojunction (DH) diodes emitting at about 8200 Å were studied. The highest CW radiance measured perpendicular to the emitting facet was 95 W/cm2.sr at 4200 A/cm2for a stripe-geometry SH device. This high radiance level was found to be consistent with an operating life of many thousands of hours. The near- and far-field patterns of the diodes are presented as well as the spectral characteristics and the radiance as a function of drive current, both pulsed and dc.
  • Keywords
    Coatings; DH-HEMTs; Detectors; Doping; Geometrical optics; Heterojunctions; Light emitting diodes; Optical refraction; Photonic band gap; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1973.1077401
  • Filename
    1077401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149232