Title :
Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD
Author :
Chih-Jen Hsiao ; Chun-Kuan Liu ; Sa-Hoang Huynh ; Thien-Huu Ha Minh ; Hung-Wei Yu ; Hong-Quan Nguyen ; Jer-Shen Maa ; Shoou-Jinn Chang ; Chang, Edward Yi
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.
Keywords :
III-V semiconductors; MOCVD; dislocations; gallium arsenide; gallium compounds; semiconductor epitaxial layers; semiconductor growth; surface morphology; surface roughness; vapour phase epitaxial growth; GaAs; GaSb-GaAs; MOCVD; V-III ratio; epitaxial growth; gallium antimonide thin film; gallium antimonide-gallium arsenide heterostructure; gallium arsenide-gallium antimonide interface; high-lattice mismatched GaAs substrates; hill-and-valley structure; metalorganic chemical vapor deposition; misfit dislocation arrays; smooth surface morphology; surface roughness; Epitaxial growth; Gallium arsenide; MOCVD; Strain; Substrates; Surface morphology; Surface treatment; GaSb; Heterostructure; Interfacial misfit dislocation (IMF); Metalorganic Chemical Vapor Deposition (MOCVD);
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920896
