DocumentCode
1149338
Title
Thin metal film room-temperature IR bolometers with nanosecond response time
Author
Block, W. ; Gaddy, Oscar L.
Author_Institution
Rome Air Development Center, Griffins AFB, NY, USA
Volume
9
Issue
11
fYear
1973
fDate
11/1/1973 12:00:00 AM
Firstpage
1044
Lastpage
1053
Abstract
The experimental and theoretical investigation of thin-film metal (bismuth, antimony, chromium, nickel) bolometers on beryllium oxide substrates is described. Responsivity, sensitivity (NEP), and time response data for each type of metal bolometer are compared with the results obtained from a thermal analysis of the bolometer. Thin-film bismuth devices can have a responsivity of 
V/W and an NEP of 
W/Hz1/2with nanosecond response time. We report measurement of 2- ns response times for bismuth-film bolometers and calculated subnanosecond response times with thinner film devices. These results show that room-temperature thin-film, metal-bolometer IR detectors should be capable of detecting nanosecond and subnanosecond rise-time IR pulses with peak power levels of the order of a few milliwatts.
V/W and an NEP of W/Hz1/2with nanosecond response time. We report measurement of 2- ns response times for bismuth-film bolometers and calculated subnanosecond response times with thinner film devices. These results show that room-temperature thin-film, metal-bolometer IR detectors should be capable of detecting nanosecond and subnanosecond rise-time IR pulses with peak power levels of the order of a few milliwatts.Keywords
Bismuth; Bolometers; Chromium; Delay; Infrared detectors; Nickel; Substrates; Thin film devices; Time factors; Transistors;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1973.1077411
Filename
1077411
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