DocumentCode :
1149338
Title :
Thin metal film room-temperature IR bolometers with nanosecond response time
Author :
Block, W. ; Gaddy, Oscar L.
Author_Institution :
Rome Air Development Center, Griffins AFB, NY, USA
Volume :
9
Issue :
11
fYear :
1973
fDate :
11/1/1973 12:00:00 AM
Firstpage :
1044
Lastpage :
1053
Abstract :
The experimental and theoretical investigation of thin-film metal (bismuth, antimony, chromium, nickel) bolometers on beryllium oxide substrates is described. Responsivity, sensitivity (NEP), and time response data for each type of metal bolometer are compared with the results obtained from a thermal analysis of the bolometer. Thin-film bismuth devices can have a responsivity of 
V/W and an NEP of 
W/Hz1/2with nanosecond response time. We report measurement of 2- ns response times for bismuth-film bolometers and calculated subnanosecond response times with thinner film devices. These results show that room-temperature thin-film, metal-bolometer IR detectors should be capable of detecting nanosecond and subnanosecond rise-time IR pulses with peak power levels of the order of a few milliwatts.
V/W and an NEP of W/Hz1/2with nanosecond response time. We report measurement of 2- ns response times for bismuth-film bolometers and calculated subnanosecond response times with thinner film devices. These results show that room-temperature thin-film, metal-bolometer IR detectors should be capable of detecting nanosecond and subnanosecond rise-time IR pulses with peak power levels of the order of a few milliwatts.Keywords :
Bismuth; Bolometers; Chromium; Delay; Infrared detectors; Nickel; Substrates; Thin film devices; Time factors; Transistors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077411
Filename :
1077411
Link To Document :
