Title :
Nondestructive Characterization of RBSOA of High-Power Bipolar Transistors
Author :
Jovanovic, Milan M. ; Lee, Fred C. ; Chen, Dan Y.
fDate :
3/1/1986 12:00:00 AM
Abstract :
Reverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.
Keywords :
Aerospace testing; Bipolar transistors; Circuit testing; Electric breakdown; Manufacturing; Nondestructive testing; Performance evaluation; Switches; Temperature; Voltage;
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
DOI :
10.1109/TAES.1986.310748
