DocumentCode :
11495
Title :
The Comparison of (Ag,Cu)(In,Ga)Se 
and Cu(In,Ga)Se Thin Films Deposited by Th
Author :
Lei Chen ; Jinwoo Lee ; Shafarman, W.N.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Delaware, Newark, DE, USA
Volume :
4
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
447
Lastpage :
451
Abstract :
(Ag,Cu)(In,Ga)Se2 and Cu(In,Ga)Se2 thin-films with bandgap ~1.35 eV were deposited by a three-stage elemental coevaporation process. The depositions were conducted at substrate temperatures of 580 °C and 650 °C to understand the effects of Ag alloying and high growth temperature on material properties. Ag/(Ag+Cu) and Ga/(In+Ga) gradients were observed and were reduced with higher growth temperature. Grain size was quantified and found to be enhanced by Ag and high growth temperature, while film texture showed no significant change with different deposition conditions.
Keywords :
alloying; copper alloys; evaporation; gallium alloys; grain size; indium alloys; selenium alloys; semiconductor growth; semiconductor thin films; silver alloys; ternary semiconductors; (AgCu)(InGa)Se2; Ag alloying effects; Cu(InGa)Se2; bandgap; film texture; grain size; high growth temperature; material properties; temperature 580 degC; temperature 650 degC; thin film deposition; three-stage elemental coevaporation; Diffraction; Films; Gallium; Grain size; Photonic band gap; Temperature; X-ray diffraction; (Ag,Cu)(In,Ga)Se$_{2}$
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2280471
Filename :
6600988
Link To Document :
