• DocumentCode
    114957
  • Title

    Hydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge solar cells

  • Author

    Chen-Chen Chung ; Kung-Liang Lin ; Hung-Wei Yu ; Nguyen-Hong Quan ; Chang-Fu Dee ; Chang, Edward Yi

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    517
  • Lastpage
    520
  • Abstract
    A new design where ZnO nanotubes were grown on the antireflection (AR) layer coated on triple-junction (T-J) solar cell devices to enhance the light conversion efficiency. Compared to the bare T-J solar cells (without an AR layer), the performance of Si3N4 AR coated solar cell showed improvement. The sample with a layer of ZnO nanotubes grown in top of AR layer showed the lowest light reflection compared with the bare and solely AR coated T-J solar cell especially in the spectrum range of 350-500 nm. The use of ZnO nanotubes have increased the conversion efficiency by 4.9% compared with the conventional T-J solar cell. While the Si3N4 AR coated sample only increased the conversion efficiency by 3.2%. This result is quite encouraging as further refinement and variation in the experiment procedures could possibly bring more exciting performance in the future.
  • Keywords
    III-V semiconductors; antireflection coatings; elemental semiconductors; semiconductor nanotubes; solar cells; zinc compounds; antireflection layer; gallium arsenide solar cells; germanium solar cells; hydrothermal growth; indium gallium phosphide solar cells; light conversion efficiency enhancement; solely AR coated T-J solar cell; triple-junction solar cell devices; zinc oxide nanotubes; Coatings; Materials; Nanotubes; Photovoltaic cells; Reflection; Reflectivity; Zinc oxide; Antireflection layer; Hydrothermal; Triple-junctions (T-J) solar cell; ZnO nanotube;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Type

    conf

  • DOI
    10.1109/SMELEC.2014.6920912
  • Filename
    6920912