• DocumentCode
    1149652
  • Title

    Additional data on the effect of doping on the lasing characteristics of GaAs AlxGa1-xAs double-heterostructure lasers

  • Author

    Pinkas, E. ; Miller, B.I. ; Hayashi, I. ; Foy, P.W.

  • Author_Institution
    Israel Institute of Technology, Haifa, Israel
  • Volume
    9
  • Issue
    2
  • fYear
    1973
  • fDate
    2/1/1973 12:00:00 AM
  • Firstpage
    281
  • Lastpage
    282
  • Abstract
    Lasing characteristics were measured for several double-heterostructure (DH) wafers with lower ( l\\sim10^{16} /cm3) and higher ( p \\approx 10^{19} /cm3) carrier concentrations to those that were reported previously by Pinkas et al. The new data give additional support to the assumption that the major lasing-loss mechanism is the free carrier absorption.
  • Keywords
    Absorption; Charge carrier processes; DH-HEMTs; Doping; Gallium arsenide; Impurities; Laboratories; Semiconductor lasers; Telephony;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1973.1077441
  • Filename
    1077441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149652