DocumentCode :
1149652
Title :
Additional data on the effect of doping on the lasing characteristics of GaAs Alx Ga1-x As double-heterostructure lasers
Author :
Pinkas, E. ; Miller, B.I. ; Hayashi, I. ; Foy, P.W.
Author_Institution :
Israel Institute of Technology, Haifa, Israel
Volume :
9
Issue :
2
fYear :
1973
fDate :
2/1/1973 12:00:00 AM
Firstpage :
281
Lastpage :
282
Abstract :
Lasing characteristics were measured for several double-heterostructure (DH) wafers with lower ( 
/cm3) and higher ( 
/cm3) carrier concentrations to those that were reported previously by Pinkas et al. The new data give additional support to the assumption that the major lasing-loss mechanism is the free carrier absorption.
/cm3) and higher ( /cm3) carrier concentrations to those that were reported previously by Pinkas et al. The new data give additional support to the assumption that the major lasing-loss mechanism is the free carrier absorption.Keywords :
Absorption; Charge carrier processes; DH-HEMTs; Doping; Gallium arsenide; Impurities; Laboratories; Semiconductor lasers; Telephony;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077441
Filename :
1077441
Link To Document :
