DocumentCode :
1149655
Title :
Implementing high-order continuity and rate dependence in SPICE models
Author :
Parker, A.E.
Author_Institution :
Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
Volume :
141
Issue :
4
fYear :
1994
fDate :
8/1/1994 12:00:00 AM
Firstpage :
251
Lastpage :
257
Abstract :
Two proposed techniques simplify and improve the implementation of SPICE device models. The first technique uses nested transformation of node potentials. It avoids the discontinuity in high-order derivatives that is typical of implementations that use conditional functions. This provides the smooth mathematical form distortion and intermodulation improves simulator convergence. The second technique uses state variables to implement descriptions of rate dependent and thermal transient behaviour. This simplifies model implementation by eliminating the need for extra circuit nodes. The paper demonstrates the proposed techniques by describing the implementation of an advanced MESFET model. The techniques will provide models that can simulate the intermodulation and transient behaviour of high-performance communication and signal processing circuits
Keywords :
SPICE; Schottky gate field effect transistors; circuit analysis computing; digital simulation; intermodulation; nonlinear network analysis; semiconductor device models; MESFET model; SPICE models; communication circuits; high-order continuity; intermodulation; nested transformation; node potentials; rate dependence; rate dependent behaviour; signal processing circuits; simulator convergence; smooth mathematical form distortion; state variables; thermal transient behaviour;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19941242
Filename :
311846
Link To Document :
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