Title :
Recombination and Joule heating effects in GTO thyristors with spatially varying lifetimes
Author :
Mawby, P.A. ; Hu, Z.B. ; Towers, M.S. ; Evans, M.J. ; Board, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. of Swansea, UK
fDate :
8/1/1994 12:00:00 AM
Abstract :
In the paper the forward conduction characteristics of the GTO thyristor are studied. A two-dimensional simulation is performed which solves the semiconductor device equations self consistently with the equation for lattice heat conduction. The significance of the different recombination mechanisms and spatially varying lifetime is considered, along with the relative effects of different mobility models. An experimental comparison with a 2.5 kV device is made and good agreement is found. The effects of heat dissipation in the structure are also considered
Keywords :
carrier lifetime; carrier mobility; electron-hole recombination; semiconductor device models; thyristors; 2.5 kV; GTO thyristors; Joule heating effects; forward conduction characteristics; heat dissipation; lattice heat conduction; mobility models; recombination mechanisms; semiconductor device equations; spatially varying lifetime; spatially varying lifetimes; two-dimensional simulation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19941104
