Title :
324×487 Schottky-barrier infrared imager
Author :
Konuma, Kazuo ; Teranishi, Nobukazu ; Tohyama, Shigeru ; Masubuchi, Kouichi ; Yamagata, Shigeki ; Tanaka, Takanori ; Oda, Eiji ; Moriyama, Yoshifumi ; Takada, Norimasa ; Yoshioka, Nobuya
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
3/1/1990 12:00:00 AM
Abstract :
A standard TV-compatible PtSi Schottky-barrier infrared imager is described. The imager is a 324×487 element area array and has an electronic shutter function. Although the pixel is 42×21 μm, a large fill factor of 42% is obtained, using a 1.5-μm minimum design rule and a two-level polysilicon layer, and two-level aluminum layer structure. Using face-down bonding technology, it was possible to reduce the package size to 60% of the conventional ceramic package size. Due to optimization of the Schottky-barrier diode process and the diode structure, the noise equivalent temperature difference is as small as 0.1 K at f/1
Keywords :
CCD image sensors; Schottky-barrier diodes; infrared imaging; platinum compounds; Al-SiO2-Si-PtSi; IR CCD image sensor; PtSi Schottky-barrier infrared imager; Schottky-barrier diode process; electronic shutter function; face-down bonding technology; fill factor; noise equivalent temperature difference; optimization; package size; standard TV compatible imager; two level Al layer; two-level polysilicon layer; Aluminum; Bonding; Charge coupled devices; Equivalent circuits; Infrared imaging; Packaging; Schottky diodes; Silicon; Temperature distribution; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
