Title :
Base current reversal in bipolar transistors and circuits: a review and update
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
A detailed study of base current reversal in silicon bipolar transistors and GaAs heterojunction bipolar transistors has been made. The physics of impact ionisation is presented followed by modelling of avalanche multiplication in devices. The effects of base current reversal on analogue and digital circuit operation are discussed
Keywords :
bipolar integrated circuits; bipolar transistors; heterojunction bipolar transistors; impact ionisation; semiconductor device models; GaAs; Si; analogue circuit operation; avalanche multiplication; base current reversal; bipolar transistors; digital circuit operation; heterojunction bipolar transistors; impact ionisation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19941101
