Title :
High-voltage polycrystalline CdSe thin-film transistors
Author :
De Baets, Johan ; Vanfleteren, Jan ; De Rycke, Igor ; Doutreloigne, Jan ; Van Calster, Andre ; De Visschere, Patrick
Author_Institution :
Lab. of Electron., Ghent State Univ., Belgium
fDate :
3/1/1990 12:00:00 AM
Abstract :
The properties of self-aligned high-voltage CdSe thin-film transistors (TFTs) are described. By analyzing the different failure mechanisms, it is found that In-doped CdSe makes device operation up to 200 V feasible. Furthermore, the high-voltage CdSe TFT shows excellent low off currents and high transconductance
Keywords :
II-VI semiconductors; cadmium compounds; failure analysis; leakage currents; power transistors; semiconductor device testing; thin film transistors; 200 V; CdSe thin film transistors; failure mechanisms; leakage currents; self-aligned high voltage TFT; semiconductors; thermal breakdown; transconductance; Breakdown voltage; Electric breakdown; Fabrication; Failure analysis; Insulation; Leakage current; Lighting; Semiconductor device breakdown; Thin film transistors; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
