• DocumentCode
    1149792
  • Title

    40 GHz, low half-wave voltage Ti:LiNbO3 intensity modulator

  • Author

    Gopalakrishnan, G.K. ; Bulmer, C.H. ; Burns, W.K. ; Greenblatt, A.S.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    28
  • Issue
    9
  • fYear
    1992
  • fDate
    4/23/1992 12:00:00 AM
  • Firstpage
    826
  • Lastpage
    827
  • Abstract
    A 5 V half-wave voltage (Vpi ) electro-optic Ti:LiNbO3 intensity modulator with a -7.5 dB (electrical) optical response at 40 GHz is demonstrated at 1.3 mu m. A thick electrode structure is used in conjunction with a thin substrate to achieve a near optical-microwave phase match and a broadband electrical response.
  • Keywords
    electro-optical devices; integrated optics; lithium compounds; optical modulation; titanium; 1.3 micron; 40 GHz; 5 V; LiNbO 3:Ti; Mach Zehnder interferometer; Ti:LiNbO 3 intensity modulator; broadband electrical response; electrooptic intensity modulator; low half-wave voltage; near optical-microwave phase match; optical response; thick electrode structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920522
  • Filename
    135117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149792