DocumentCode :
1149792
Title :
40 GHz, low half-wave voltage Ti:LiNbO3 intensity modulator
Author :
Gopalakrishnan, G.K. ; Bulmer, C.H. ; Burns, W.K. ; Greenblatt, A.S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
28
Issue :
9
fYear :
1992
fDate :
4/23/1992 12:00:00 AM
Firstpage :
826
Lastpage :
827
Abstract :
A 5 V half-wave voltage (Vpi ) electro-optic Ti:LiNbO3 intensity modulator with a -7.5 dB (electrical) optical response at 40 GHz is demonstrated at 1.3 mu m. A thick electrode structure is used in conjunction with a thin substrate to achieve a near optical-microwave phase match and a broadband electrical response.
Keywords :
electro-optical devices; integrated optics; lithium compounds; optical modulation; titanium; 1.3 micron; 40 GHz; 5 V; LiNbO 3:Ti; Mach Zehnder interferometer; Ti:LiNbO 3 intensity modulator; broadband electrical response; electrooptic intensity modulator; low half-wave voltage; near optical-microwave phase match; optical response; thick electrode structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920522
Filename :
135117
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1149792
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