• DocumentCode
    1149796
  • Title

    Photoreflectance of InSb/GaAs heterostructures at E1 and E1+Δ1 transitions

  • Author

    Beaulieu, Y. ; Webb, J.B. ; Brebner, J.L.

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
  • Volume
    30
  • Issue
    15
  • fYear
    1994
  • fDate
    7/21/1994 12:00:00 AM
  • Firstpage
    1250
  • Lastpage
    1251
  • Abstract
    The photoreflectance spectra of InSb/GaAs heterostructures at the E1 and E1+Δ1 transitions have been measured as a function of layer thickness. The spectra show an increase in lineshape broadening, similar to that observed in the increase in FWHM of the X-ray diffraction peaks, as the film thickness decreases. The data indicate increased crystal quality with increasing layer thickness. The results show that photoreflectance can be used as a tool to study the structural quality of lattice-mismatched heterostructures
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoreflectance; semiconductor junctions; semiconductor thin films; InSb-GaAs; InSb/GaAs heterostructures; crystal quality; film thickness; lattice-mismatched heterostructures; layer thickness; lineshape broadening; photoreflectance spectra; structural quality;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940822
  • Filename
    311873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149796