Title :
Large-area low-capacitance InP/InGaAs MSM photodetectors for high-speed operation under front and rear illumination
Author :
Hieronymi, F. ; Bottcher, E.H. ; Droge, E. ; Kuhl, D. ; Kollakowski, St. ; Bimberg, Dieter
Author_Institution :
Inst. fur Festkorperphys. I, Tech. Univ. Berlin
fDate :
7/21/1994 12:00:00 AM
Abstract :
Large-area long-wavelength metal-semiconductor-metal (MSM) photodetectors fabricated on the Fe-doped InP/InGaAs material system have been characterised under front and rear illumination employing different thicknesses of the photoactive layer. With a 350 μm diameter detection area, theoretically limited capacitance values (0.75 pF) and very low depletion voltages (<1 V) were obtained. For an active layer thickness of 0.7 μm, the devices show an external quantum yield of up to 60% and a bandwidth of 0.95 GHz at 10 V bias
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; metal-semiconductor-metal structures; photodetectors; 0.7 micron; 0.75 pF; 0.95 GHz; 350 micron; InP:Fe-InGaAs:Fe; MSM photodetectors; front illumination; high-speed operation; large-area device; long-wavelength response; low-capacitance type; metal-semiconductor-metal photodetectors; photoactive layer thickness; rear illumination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940857
