DocumentCode
1149813
Title
Submilliamp threshold current (0.62 mA at 0 degrees C) and high output power (220 mW) 1.5 mu m tensile strained InGaAs single quantum well lasers
Author
Thijs, P.J.A. ; Binsma, J.J.M. ; Tiemeijer, L.F. ; Van Dongen, T.
Author_Institution
Philips Optoelectron., Centre, Eindhoven, Netherlands
Volume
28
Issue
9
fYear
1992
fDate
4/23/1992 12:00:00 AM
Firstpage
829
Lastpage
830
Abstract
The strain dependence of the threshold current density of lambda =1.5 mu m wavelength tensile strained InxGa1-xAs (0.22<*<0.53)-InGaAsP single quantum well (SQW) lasers is reported. The optimum indium mole fraction was found to be 0.32 (1.5% strain), resulting in TM polarised lasers with threshold current densities as low as 92 A/cm2. Using this SQW, buried heterostructure lasers with 0.62 mA threshold and 220 mW CW output power were realised.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; internal stresses; semiconductor junction lasers; 0 degC; 0.62 mA; 1.5 micron; 220 W; In mole fraction; In xGa 1-xAs-InGaAsP single quantum well laser; TM polarised lasers; buried heterostructure lasers; high output power; strain dependence; tensile strained SQW laser; threshold current; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920524
Filename
135119
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