DocumentCode
1149894
Title
Photoexcited resonance-enhanced nitrogen-trap GaAs1-x Px :N laser
Author
Holonyak, Nick, Jr. ; Dupuis, Russell D. ; Macksey, H. ; Zack, Gregory W. ; Craford, M. George ; Finn, Donald
Author_Institution
University of Illinois, Urbana, IL, USA
Volume
9
Issue
2
fYear
1973
fDate
2/1/1973 12:00:00 AM
Firstpage
379
Lastpage
383
Abstract
Data (77 K) on 
and 
N-doped GaAS1-x Px are presented showing that the electron-hole recombination probability may be resonantly enhanced when the crystal composition is varied and the 
conduction band minimum is made degenerate, or nearly degenerate, with the 
-line N isoelectronic trap state ( 
eV, 
). Data on GaAs1-x Px :N suggest that resonant enhancement occurs in a "turning" range 
meV. A consequence of this work is that photopumped GaAs1-x Px :N ( ) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAs1-x Px :N are general enough to be applicable also to p-n junctions.
and N-doped GaAS conduction band minimum is made degenerate, or nearly degenerate, with the -line N isoelectronic trap state ( eV, ). Data on GaAs meV. A consequence of this work is that photopumped GaAs ) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAsKeywords
Doping; Electron traps; Erbium; Gallium arsenide; Laser transitions; P-n junctions; Photoelectricity; Resonance; Spontaneous emission; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1973.1077464
Filename
1077464
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